By Ivan A. Parinov
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Additional resources for Advanced Nano- and Piezoelectric Materials and Their Applications
The capacitor dependencies of the samples under investigation are shown in Figure 8 – 11 . The authors of  found the 6Н-SiC oxidation rate dependence on partial pressure of oxygen and water vapor. The oxidation was carried out within a pyrogen system, in which О2 and Н2 reacted inside a reaction chamber. A thermocouple-sensing element was used to measure the temperature during the oxidation process. The oxide thickness was measured by using ellipsometry. 71016 cm3 were used to carry out the experiments.
In (14), it is expected that Н2 is exhausted by reaction with ½О2 to produce a Н2О molecule. The calculation data and the thicknesses of the oxide formed for various gas flow rates are listed in Table 2. 15, while for silicon it is observed under pressure of р = 1 (humidity 100 %). Therefore, it is possible to make a thick oxide controlling Н2О and О2 flow Development and Study of Silicon Dioxide Nanostructured Films … 37 rates on the Si-face. e. the rate of the flow, comprising water vapor and oxygen).
By using these suggestions, we can submit the schedule for growth of silicon dioxide at the temperature of 1173 K (see Figure 5) In the case of using short-wavelength light sources the model can be complicated, if we take into account the dissociation of molecular oxygen in the gas phase volume. Atomic oxygen in the presence of oxidizing atmosphere in the volume of 3-4 % increases the rate of oxidation by about of 10 % . Presence of atomic oxygen in the oxidizing atmosphere in the volume of 3-4 % increases the rate of oxidation by about of 10 % .